IKW40N120T2FKSA1 Datasheet PDF - Infineon

●The IKW40N120T2 is a Low Loss IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel emitter controlled diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

● Lowest Vce (sat) drop for lower conduction losses

● Low switching losses

● Easy parallel switching capability due to positive temperature coefficient in Vce (sat)

● Very soft, fast recovery anti-parallel emitter controlled HE diode

● High ruggedness, temperature stable behaviour

● Low EMI emissions

● Low gate charge

● Very tight parameter distribution

● Highest efficiency - Low conduction and switching losses

● High device reliability

● 10µs Short-circuit withstand time