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IMZ1AT108
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IMZ1AT108 Datasheet PDF (4 Pages)
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IMZ1AT108 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
180 MHz
Number of Pins
6 Pin
Current Rating
150 mA
Case/Package
SOT-457
Power Rating
0.3 W
Number of Positions
6 Position
Polarity
NPN, PNP
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
0.15A
hFE Min
120 @1mA, 6V
hFE Max
560
Input Power (Max)
300 mW
DC Current Gain (hFE)
120
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

IMZ1AT108 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.2 mm
Operating Temperature
150℃ (TJ)

IMZ1AT108 Documents

ROHM Semiconductor
4 Pages / 0.05 MByte
ROHM Semiconductor
45 Pages / 0.4 MByte
ROHM Semiconductor
1 Pages / 0.12 MByte

IMZ1 Documents

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SMT NPN+PNP 50V 0.15A
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SMT6/SOT-457 NPN+PNP 50V 0.15A
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General purpose transistor (dual transistors)
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