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IPA80R1K4CE
$ 0.715
IPA80R1K4CE Datasheet PDF (15 Pages)
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IPA80R1K4CE Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-220-3
Polarity
N-CH
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Continuous Drain Current (Ids)
3.9A
Rise Time
15 ns
Input Capacitance (Ciss)
570pF @100V(Vds)
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
31000 mW

IPA80R1K4CE Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.65 mm
Size-Width
4.85 mm
Size-Height
16.15 mm
Operating Temperature
-55℃ ~ 150℃

IPA80R1K4CE Documents

Infineon
15 Pages / 1.02 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
51 Pages / 2.6 MByte
Infineon
37 Pages / 2.01 MByte

IPA80R1K4 Documents

Infineon
TO-220FP N-CH 800V 3.9A
Infineon
N-CH 800V 3.9A
Infineon
TO-220FP N-CH 800V 3.9A
Infineon
Trans MOSFET N-CH 800V 4A 3Pin(3+Tab) TO-220FP Tube
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