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Part Datasheet Search > MOSFETs > Infineon > IPB017N08N5ATMA1 Datasheet PDF
IPB017N08N5ATMA1
$ 3.363
IPB017N08N5ATMA1 Datasheet PDF (12 Pages)
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IPB017N08N5ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
375 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.5 mΩ
Polarity
N-CH
Power Dissipation
375 W
Threshold Voltage
2.2 V
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80 V
Continuous Drain Current (Ids)
120A
Rise Time
36 ns
Input Capacitance (Ciss)
16900pF @40V(Vds)
Input Power (Max)
375 W
Fall Time
37 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375W (Tc)

IPB017N08N5ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB017N08N5ATMA1 Documents

Infineon
12 Pages / 1.15 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPB017N08N5 Documents

Infineon
D2PAK N-CH 80V 120A
Infineon
D2PAK N-CH 80V 120A
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