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Part Datasheet Search > MOSFETs > Infineon > IPB017N10N5ATMA1 Datasheet PDF
IPB017N10N5ATMA1
$ 2.928
IPB017N10N5ATMA1 Datasheet PDF (12 Pages)
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IPB017N10N5ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
TO-263-7
Power Rating
375 W
Number of Channels
1 Channel
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.0015 Ω
Polarity
N-CH
Power Dissipation
375 W
Threshold Voltage
2.2 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
180A
Rise Time
23 ns
Input Capacitance (Ciss)
15600pF @50V(Vds)
Input Power (Max)
375 W
Fall Time
27 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375W (Tc)

IPB017N10N5ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Width
9.25 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB017N10N5ATMA1 Documents

Infineon
12 Pages / 1.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPB017N10N5 Documents

Infineon
D2PAK N-CH 100V 180A
Infineon
D2PAK N-CH 100V 180A
Infineon
Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; PG-TO263-7
Infineon
Trans MOSFET N-CH 100V 180A 7Pin(6+Tab) D2PAK T/R
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