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Part Datasheet Search > MOSFETs > Infineon > IPB019N06L3GATMA1 Datasheet PDF
IPB019N06L3GATMA1
$ 2.286
IPB019N06L3GATMA1 Datasheet PDF (9 Pages)
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IPB019N06L3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
250 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0016 Ω
Polarity
N-Channel
Power Dissipation
250 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
120A
Rise Time
79 ns
Input Capacitance (Ciss)
21000pF @30V(Vds)
Fall Time
38 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250000 mW

IPB019N06L3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm

IPB019N06L3GATMA1 Documents

Infineon
9 Pages / 0.52 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPB019N06L3 Documents

Infineon
D2PAK N-CH 60V 120A
Infineon
MOSFET Transistor, N Channel, 120A, 60V, 0.0016Ω, 10V, 1.7V
Infineon
Trans MOSFET N-CH 60V 120A 3Pin TO-263 T/R
Infineon
D2PAK N-CH 60V 120A
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