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Part Datasheet Search > MOSFETs > Infineon > IPB019N08N3GATMA1 Datasheet PDF
IPB019N08N3GATMA1
$ 3.61
IPB019N08N3GATMA1 Datasheet PDF (9 Pages)
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IPB019N08N3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
TO-263-7
Number of Channels
1 Channel
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.0016 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
2.8 V
Input Capacitance
10700 pF
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80 V
Continuous Drain Current (Ids)
180A
Rise Time
73 ns
Input Capacitance (Ciss)
10700pF @40V(Vds)
Fall Time
33 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

IPB019N08N3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃

IPB019N08N3GATMA1 Documents

Infineon
9 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
34 Pages / 2.17 MByte
Infineon
37 Pages / 2.01 MByte

IPB019N08N3 Documents

Infineon
D2PAK N-CH 80V 180A
Infineon
Trans MOSFET N-CH 80V 180A 7Pin TO-263 T/R
Infineon
Trans MOSFET N-CH 80V 180A 7Pin(6+Tab) TO-263 T/R
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