IPB025N10N3GATMA1 Datasheet PDF - Infineon

●The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

● Excellent switching performance

● Environmentally-friendly

● Increased efficiency

● Highest power density

● Less paralleling required

● Smallest board-space consumption

● Easy to design