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Part Datasheet Search > MOSFETs > Infineon > IPB027N10N3GATMA1 Datasheet PDF
IPB027N10N3GATMA1
$ 3.227
IPB027N10N3GATMA1 Datasheet PDF (9 Pages)
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IPB027N10N3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
300 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0023 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
2.7 V
Input Capacitance
11100 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
120A
Rise Time
58 ns
Input Capacitance (Ciss)
11100pF @50V(Vds)
Fall Time
28 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IPB027N10N3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.25 mm
Size-Height
4.57 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB027N10N3GATMA1 Documents

Infineon
9 Pages / 0.51 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
34 Pages / 2.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte

IPB027N10N3 Documents

Infineon
D2PAK N-CH 100V 120A
Infineon
Single N-Channel 100V 2.7mOhm 206NC 300W OptiMOS SMT Mosfet - TO-263-3
Infineon
MOSFET N-CH 100V 120A TO263-3
IFA
N-Channel 100V 2.7mOhm OptiMOS™3 Power-Transistor - PG-TO-263-3
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