IPB036N12N3GATMA1 Datasheet PDF - Infineon

●The IPB036N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.

● Excellent switching performance

● World"s lowest RDS (ON)

● Very low Qg and Qgd

● Excellent gate charge x RDS (ON) product (FOM)

● MSL1 rated 2

● Environmentally friendly

● Increased efficiency

● Highest power density

● Less paralleling required

● Smallest board-space consumption

● Easy-to-design products

● Qualified according to JEDE for target applications

● Halogen-free, Green device

● Ideal for high-frequency switching and synchronous rectification

● Normal level

● 100% Avalanche tested