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Part Datasheet Search > MOSFETs > Infineon > IPB038N12N3 G Datasheet PDF
IPB038N12N3 G
$ 3.508
IPB038N12N3 G Datasheet PDF (27 Pages)
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IPB038N12N3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0032 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
120 V
Rise Time
52 ns
Input Capacitance (Ciss)
13800pF @60V(Vds)
Input Power (Max)
300 W
Fall Time
21 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IPB038N12N3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB038N12N3 G Documents

Infineon
27 Pages / 0.41 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPB038N12N3 Documents

Infineon
D2PAK N-CH 120V 120A
Infineon
Trans MOSFET N-CH 120V 120A 3Pin(2+Tab) TO-263
Infineon
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