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IPB039N10N3 G Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-263-7

Description:

Trans MOSFET N-CH 100V 160A 7Pin TO-263 T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPB039N10N3 G Datasheet (18 Pages)

Package Outline Dimension on16 Page

Part Numbering System on18 Page

IPB039N10N3 G User Reference Manual Guide (270 Pages)IPB039N10N3 G Application Note (37 Pages)

IPB039N10N3 G Datasheet PDF (18 Pages)

View Datasheet

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IPB039N10N3 G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

7 Pin

Case/Package

TO-263-7

Number of Positions

7 Position

Drain to Source Resistance (on) (Rds)

0.0033 Ω

Polarity

N-Channel

Power Dissipation

214 W

Threshold Voltage

2.7 V

Drain to Source Voltage (Vds)

100 V

Rise Time

59 ns

Input Capacitance (Ciss)

8410pF @50V(Vds)

Input Power (Max)

214 W

Fall Time

14 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

214W (Tc)

View Datasheet >

IPB039N10N3 G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

10 mm

Size-Width

9.25 mm

Size-Height

4.4 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IPB039N10N3 G Environmental

IPB039N10N3 G Export Classifications

IPB039N10N3 G Function Overview

IPB039N10N3 G Documents

IPB039N10N3 G Datasheet

Infineon

18 Pages / 0.32 MByte

IPB039N10N3 G User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IPB039N10N3 G Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IPB039N10N3 G Application Note

Infineon

37 Pages / 2.01 MByte

IPB039N10N3 Documents

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IPB039N10N3 G Datasheet PDF

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Trans MOSFET N-CH 100V 160A 7Pin TO-263 T/R

IPB039N10N3G Datasheet PDF

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IPB039N10N3GE8187ATMA1 Datasheet PDF

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Trans MOSFET N-CH 100V 160A 7Pin TO-263 T/R

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MOSFET OptiMOS 3 Power Transistor

IPB039N10N3GXT Datasheet PDF

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D2PAK N-CH 100V 160A

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