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Part Datasheet Search > MOSFETs > Infineon > IPB042N10N3 G Datasheet PDF
IPB042N10N3 G
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IPB042N10N3 G Datasheet PDF - Infineon

Manufacturer:
Infineon
Category:
MOSFETs
Case Package:
TO-263-3
Description:
Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IPB042N10N3 G Datasheet (11 Pages)IPB042N10N3 G User Reference Manual Guide (270 Pages)IPB042N10N3 G Application Note (37 Pages)
IPB042N10N3 G Datasheet PDF (11 Pages)
View Datasheet
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IPB042N10N3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0036 Ω
Polarity
N-Channel
Power Dissipation
214 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Rise Time
59 ns
Input Capacitance (Ciss)
8410pF @50V(Vds)
Fall Time
14 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
214W (Tc)
View Datasheet >

IPB042N10N3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
View Datasheet >

IPB042N10N3 G Documents

IPB042N10N3 G Datasheet
Infineon
11 Pages / 0.73 MByte
IPB042N10N3 G User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IPB042N10N3 G Other Datasheet PDF
Infineon
30 Pages / 0.64 MByte
IPB042N10N3 G Application Note
Infineon
37 Pages / 2.01 MByte

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