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Part Datasheet Search > MOSFETs > Infineon > IPB042N10N3GATMA1 Datasheet PDF
IPB042N10N3GATMA1
$ 0.554
IPB042N10N3GATMA1 Datasheet PDF (11 Pages)
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IPB042N10N3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
214 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0036 Ω
Polarity
N-Channel
Power Dissipation
214 W
Threshold Voltage
2.7 V
Input Capacitance
6320 pF
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
100A
Rise Time
59 ns
Input Capacitance (Ciss)
6320pF @50V(Vds)
Fall Time
14 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
214W (Tc)

IPB042N10N3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB042N10N3GATMA1 Documents

Infineon
11 Pages / 0.73 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte

IPB042N10N3 Documents

Infineon
D2PAK N-CH 100V 100A
Infineon
Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R
Infineon
Trans MOSFET N-CH 100V 100A 3Pin TO-263 T/R
Infineon
MOSFET N-CH 100V 100A TO263-3
Infineon
MOSFET N-Ch 100V 100A D2PAK-2
Infineon
D2PAK N-CH 100V 100A
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