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IPB072N15N3GE8187ATMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-263-3

Description:

MOSFET N-CH 150V 100A TO263-3

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPB072N15N3GE8187ATMA1 Datasheet (11 Pages)IPB072N15N3GE8187ATMA1 User Reference Manual Guide (3 Pages)

IPB072N15N3GE8187ATMA1 Datasheet PDF (11 Pages)

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IPB072N15N3GE8187ATMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

TO-263-3

Power Dissipation

300W (Tc)

Drain to Source Voltage (Vds)

150 V

Input Capacitance (Ciss)

5470pF @75V(Vds)

Input Power (Max)

300 W

Power Dissipation (Max)

300W (Tc)

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IPB072N15N3GE8187ATMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IPB072N15N3GE8187ATMA1 Environmental

IPB072N15N3GE8187ATMA1 Function Overview

IPB072N15N3GE8187ATMA1 Documents

IPB072N15N3GE8187ATMA1 Datasheet

Infineon

11 Pages / 0.72 MByte

IPB072N15N3GE8187ATMA1 User Reference Manual Guide

Infineon

3 Pages / 0.36 MByte

IPB072N15N3GE8187ATMA1 Notice File

Infineon

7 Pages / 0.07 MByte

IPB072N15N3GE8187 Documents

IPB072N15N3G E8187 Datasheet PDF

Infineon

MOS Power Transistors LV (< 200V)

IPB072N15N3GE8187ATMA1 Datasheet PDF

Infineon

MOSFET N-CH 150V 100A TO263-3

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