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Part Datasheet Search > MOSFETs > Infineon > IPB107N20NA Datasheet PDF
IPB107N20NA
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IPB107N20NA Datasheet PDF (10 Pages)
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IPB107N20NA Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0096 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
88A
Rise Time
26 ns
Input Capacitance (Ciss)
7100pF @100V(Vds)
Input Power (Max)
300 W
Fall Time
11 ns
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
300W (Tc)

IPB107N20NA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPB107N20NA Documents

Infineon
10 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPB107N20 Documents

Infineon
D2PAK N-CH 200V 88A
Infineon
D2PAK N-CH 200V 88A
Infineon
Trans MOSFET N-CH 200V 88A 3Pin(2+Tab) TO-263
Infineon
D2PAK N-CH 200V 88A
Infineon
MOSFET N-CH 200V 88A TO263-3
Infineon
D2PAK N-CH 200V 88A
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