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Part Datasheet Search > Infineon > IPB110N20N3LFATMA1 Datasheet PDF
IPB110N20N3LFATMA1
$ 4.852

IPB110N20N3LFATMA1 Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0098 Ω
Power Dissipation
250 W
Threshold Voltage
3.2 V
Drain to Source Voltage (Vds)
200 V
Rise Time
70 ns
Input Capacitance (Ciss)
500pF @100V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250000 mW

IPB110N20N3LFATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)

IPB110N20N3LFATMA1 Documents

Infineon
11 Pages / 0.96 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPB110N20N3 Documents

Infineon
Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Infineon
Trans MOSFET N-CH 200V 88A 3Pin(2+Tab) D2PAK T/R
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