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Part Datasheet Search > MOSFETs > Infineon > IPD350N06L G Datasheet PDF
IPD350N06L G
$ 0.492
IPD350N06L G Datasheet PDF (9 Pages)
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IPD350N06L G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
29.0 A
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
35 mΩ
Power Dissipation
68 W
Input Capacitance
800 pF
Gate Charge
13.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
29.0 A
Rise Time
21 ns
Input Capacitance (Ciss)
600pF @30V(Vds)
Input Power (Max)
68 W
Fall Time
20 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
68 W

IPD350N06L G Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 175℃

IPD350N06L G Documents

Infineon
9 Pages / 0.98 MByte
Infineon
9 Pages / 0.99 MByte

IPD350N06 Documents

Infineon
DPAK N-CH 60V 29A
Infineon
Trans MOSFET N-CH 60V 29A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 29A I(D), 60V, 0.035Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3Pin
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