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IPD60R180P7ATMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Case Package:

TO-252-3

Description:

Trans MOSFET N-CH 600V 18A 3Pin(2+Tab) DPAK T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPD60R180P7ATMA1 User Reference Manual Guide (28 Pages)IPD60R180P7ATMA1 Application Note (37 Pages)

IPD60R180P7ATMA1 Datasheet PDF (28 Pages)

View Datasheet

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IPD60R180P7ATMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.145 Ω

Power Dissipation

72 W

Threshold Voltage

3.5 V

Drain to Source Voltage (Vds)

650 V

Rise Time

12 ns

Input Capacitance (Ciss)

1081pF @400V(Vds)

Fall Time

8 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

72W (Tc)

IPD60R180P7ATMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

IPD60R180P7ATMA1 Environmental

IPD60R180P7ATMA1 Function Overview

IPD60R180P7ATMA1 Documents

IPD60R180P7ATMA1 User Reference Manual Guide

Infineon

28 Pages / 1.49 MByte

IPD60R180P7ATMA1 Other Datasheet PDF

Infineon

37 Pages / 2.89 MByte

IPD60R180P7ATMA1 Application Note

Infineon

37 Pages / 2.01 MByte

IPD60R180P7 Documents

IPD60R180P7 Datasheet PDF

Infineon

N-CH 600V 18A 180mOhm DPAK

IPD60R180P7S Datasheet PDF

Infineon

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

IPD60R180P7ATMA1 Datasheet PDF

Infineon

Trans MOSFET N-CH 600V 18A 3Pin(2+Tab) DPAK T/R

IPD60R180P7SAUMA1 Datasheet PDF

Infineon

Trans MOSFET N-CH 600V 18A T/R