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Part Datasheet Search > MOSFETs > Infineon > IPD60R2K0C6BTMA1 Datasheet PDF
IPD60R2K0C6BTMA1
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IPD60R2K0C6BTMA1 Datasheet PDF (14 Pages)
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IPD60R2K0C6BTMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
22.3 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.8 Ω
Polarity
N-CH
Power Dissipation
22.3 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
2.4A
Rise Time
7 ns
Input Capacitance (Ciss)
140pF @100V(Vds)
Fall Time
50 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
22.3W (Tc)

IPD60R2K0C6BTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD60R2K0C6BTMA1 Documents

Infineon
14 Pages / 0.91 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.19 MByte

IPD60R2K0C6 Documents

Infineon
DPAK N-CH 650V 2.4A
Infineon
DPAK N-CH 650V 2.4A
Infineon
Trans MOSFET N-CH 650V 2.4A 3Pin TO-252 T/R
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