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Part Datasheet Search > MOSFETs > Infineon > IPD60R600E6 Datasheet PDF
IPD60R600E6
$ 0.751
IPD60R600E6 Datasheet PDF (17 Pages)
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IPD60R600E6 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Polarity
N-CH
Power Dissipation
63W (Tc)
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
7.3A
Rise Time
8 ns
Input Capacitance (Ciss)
440pF @100V(Vds)
Input Power (Max)
63 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
63W (Tc)

IPD60R600E6 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.41 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD60R600E6 Documents

Infineon
17 Pages / 1.19 MByte
Infineon
7 Pages / 0.23 MByte

IPD60R600 Documents

Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 650V 7.3A
Infineon
DPAK N-CH 600V 7.3A
Infineon
DPAK N-CH 600V 6.1A
Infineon
Mosfet n-Ch 650V 6A To252-3
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Infineon
N-CH 600V 7.3A
Infineon
Trans MOSFET N-CH 600V 6A T/R
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