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Part Datasheet Search > MOSFETs > Infineon > IPD80R1K4CE Datasheet PDF
IPD80R1K4CE
$ 0.467
IPD80R1K4CE Datasheet PDF (15 Pages)
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IPD80R1K4CE Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Polarity
N-CH
Power Dissipation
63 W
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
3.9A
Rise Time
15 ns
Input Capacitance (Ciss)
570pF @100V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
63 W

IPD80R1K4CE Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃

IPD80R1K4CE Documents

Infineon
15 Pages / 2.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte

IPD80R1K4 Documents

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DPAK N-CH 800V 3.9A
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Trans MOSFET N-CH 800V 4A 3Pin(2+Tab) DPAK T/R
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DPAK N-CH 800V 3.9A
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DPAK N-CH 800V 3.9A
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N-CH 800V 4A 1400mOhm TO252-3
IFA
N-Channel 800V 1.4Ω 23NC SMT CoolMOS CE Power Transistor - DPAK
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