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Part Datasheet Search > Infineon > IPD80R900P7ATMA1 Datasheet PDF
IPD80R900P7ATMA1
$ 0.935

IPD80R900P7ATMA1 Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.77 Ω
Power Dissipation
45 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
800 V
Rise Time
8 ns
Input Capacitance (Ciss)
350pF @500V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45000 mW

IPD80R900P7ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)

IPD80R900P7ATMA1 Documents

Infineon
13 Pages / 0.95 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
37 Pages / 2.01 MByte

IPD80R900P7 Documents

Infineon
N-CH 800V 6A 900mOhm DPAK
Infineon
Mosfet n-Ch 800V Coolmos To252-3
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