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Part Datasheet Search > High Voltage MOS > Infineon > IPD90R1K2C3ATMA1 Datasheet PDF
IPD90R1K2C3ATMA1
$ 1.205
IPD90R1K2C3ATMA1 Datasheet PDF (10 Pages)
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IPD90R1K2C3ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
83 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
N-Channel
Power Dissipation
83 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
5.1A
Rise Time
20 ns
Input Capacitance (Ciss)
710pF @100V(Vds)
Input Power (Max)
83 W
Fall Time
40 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
83W (Tc)

IPD90R1K2C3ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD90R1K2C3ATMA1 Documents

Infineon
10 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

IPD90R1K2C3 Documents

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DPAK N-CH 900V 5.1A
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DPAK N-CH 900V 5.1A
Infineon
DPAK N-CH 900V 5.1A
Infineon
MOSFET N-CH 900V 5.1A TO-252
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