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Part Datasheet Search > MOSFETs > Infineon > IPG20N06S2L65ATMA1 Datasheet PDF
IPG20N06S2L65ATMA1
$ 0.683
IPG20N06S2L65ATMA1 Datasheet PDF (9 Pages)
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IPG20N06S2L65ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8-4
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.053 Ω
Polarity
N-CH
Power Dissipation
43 W
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
20A
Rise Time
3 ns
Input Capacitance (Ciss)
410pF @25V(Vds)
Input Power (Max)
43 W
Fall Time
7 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
43000 mW

IPG20N06S2L65ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.15 mm
Size-Width
5.9 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPG20N06S2L65ATMA1 Documents

Infineon
9 Pages / 0.15 MByte
Infineon
138 Pages / 12.05 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
56 Pages / 6.94 MByte
Infineon
2 Pages / 0.1 MByte

IPG20N06S2L65 Documents

Infineon
TDSON N-CH 55V 20A
Infineon
TDSON N-CH 55V 20A
Infineon
TDSON N-CH 55V 20A
Infineon
TDSON N-CH 55V 20A
Infineon
Trans MOSFET N-CH 55V 20A 8Pin TDSON
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