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Part Datasheet Search > MOSFETs > Infineon > IPG20N06S4L26ATMA1 Datasheet PDF
IPG20N06S4L26ATMA1
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IPG20N06S4L26ATMA1 Datasheet PDF (9 Pages)
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IPG20N06S4L26ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8-4
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.021 Ω
Polarity
Dual N-Channel
Power Dissipation
33 W
Threshold Voltage
1.7 V
Input Capacitance
1100 pF
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
20A
Rise Time
1.5 ns
Input Capacitance (Ciss)
1100pF @25V(Vds)
Input Power (Max)
33 W
Fall Time
10 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
33000 mW

IPG20N06S4L26ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.15 mm
Size-Width
5.9 mm
Size-Height
0.75 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPG20N06S4L26ATMA1 Documents

Infineon
9 Pages / 0.14 MByte
Infineon
138 Pages / 12.05 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
56 Pages / 6.94 MByte

IPG20N06S4L26 Documents

Infineon
TDSON N-CH 60V 20A
Infineon
TDSON N-CH 60V 20A
Infineon
TDSON N-CH 60V 20A
Infineon
TDSON N-CH 60V 20A
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