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Part Datasheet Search > MOSFETs > Infineon > IPN50R3K0CEATMA1 Datasheet PDF
IPN50R3K0CEATMA1
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IPN50R3K0CEATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-223
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
2.7 Ω
Polarity
N-Channel
Power Dissipation
5 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
1.7A
Rise Time
5.8 ns
Input Capacitance (Ciss)
84pF @100V(Vds)
Fall Time
49 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
5000 mW

IPN50R3K0CEATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)

IPN50R3K0CEATMA1 Documents

Infineon
13 Pages / 1.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
51 Pages / 2.6 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.22 MByte

IPN50R3K0 Documents

Infineon
SOT-223 N-CH 500V 1.7A
Infineon
N-CH 500V 2, 6A 3000mOhm SOT-223
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