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Part Datasheet Search > High Voltage MOS > Infineon > IPN60R2K1CEATMA1 Datasheet PDF
IPN60R2K1CEATMA1
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IPN60R2K1CEATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-223-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.89 Ω
Polarity
N-Channel
Power Dissipation
5 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
3.7A
Rise Time
7 ns
Input Capacitance (Ciss)
140pF @100V(Vds)
Fall Time
50 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
5W (Tc)

IPN60R2K1CEATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.6 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IPN60R2K1CEATMA1 Documents

Infineon
13 Pages / 1.02 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
51 Pages / 2.6 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.22 MByte

IPN60R2K1 Documents

Infineon
SOT-223 N-CH 600V 3.7A
Infineon
SOT-223 N-CH 600V 3.7A
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