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Part Datasheet Search > MOSFETs > Infineon > IPP075N15N3 G Datasheet PDF
IPP075N15N3 G
$ 0.983
IPP075N15N3 G Datasheet PDF (11 Pages)
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IPP075N15N3 G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
6.2 mΩ
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
150 V
Rise Time
35 ns
Input Capacitance (Ciss)
5470pF @75V(Vds)
Fall Time
14 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300000 mW

IPP075N15N3 G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10 mm
Size-Width
4.57 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃

IPP075N15N3 G Documents

Infineon
11 Pages / 0.72 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPP075N15N3 Documents

Infineon
TO-220 N-CH 150V 100A
Infineon
The IPP075N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Infineon
Trans MOSFET N-CH 150V 100A 3Pin(3+Tab) TO-220
Infineon
TO-220 N-CH 150V 100A
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