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Part Datasheet Search > MOSFETs > Infineon > IPP110N20NA Datasheet PDF
IPP110N20NA
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IPP110N20NA Datasheet PDF (10 Pages)
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IPP110N20NA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0099 Ω
Polarity
N-Channel
Power Dissipation
300 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
88A
Rise Time
26 ns
Input Capacitance (Ciss)
7100pF @100V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IPP110N20NA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPP110N20NA Documents

Infineon
10 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IPP110N20 Documents

Infineon
TO-220 N-CH 200V 88A
Infineon
Trans MOSFET N-CH 200V 88A 3Pin TO-220 Tube
Infineon
TO-220 N-CH 200V 88A
Infineon
TO-220 N-CH 200V 88A
Infineon
Power Field-Effect Transistor, 88A I(D), 200V, 0.011Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3Pin
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