IPP60R099P7 Datasheet PDF - Infineon

●Description:

●The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

●Summary of Features:

●Efficiency

● 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

●Ease-of-use

● Integrated ESD diode from 180mN and above R DS(on)s

● Integrated gate resistor R G

● Rugged body diode

● Wide portfolio in through hole and surface mount packages

● Both standard grade and industrial grade parts are available

●Benefits:

●Efficiency

● Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

●Ease-of-use

● Ease-of-use in manufacturing environments by stopping ESD failures occurring

● Integrated R G reduces MOSFET oscillation sensitivity

● MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

● Excellent ruggedness during hard commutation of the body diode seen in LLC topology

● Suitable for a wide variety of end applications and output powers

● Parts available suitable for consumer and industrial applications