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Part Datasheet Search > MOSFETs > Infineon > IPT020N10N3 Datasheet PDF
IPT020N10N3
$ 3.237
IPT020N10N3 Datasheet PDF (12 Pages)
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IPT020N10N3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
HSOF-8
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0017 Ω
Polarity
N-Channel
Power Dissipation
375 W
Threshold Voltage
2.7 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
300A
Rise Time
58 ns
Input Capacitance (Ciss)
11200pF @50V(Vds)
Fall Time
18 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
375 W

IPT020N10N3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.58 mm
Size-Width
10.1 mm
Size-Height
2.4 mm
Operating Temperature
-55℃ ~ 175℃

IPT020N10N3 Documents

Infineon
12 Pages / 1.21 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
34 Pages / 2.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
4 Pages / 0.68 MByte

IPT020N10 Documents

Infineon
HSOF N-CH 100V 300A
Infineon
HSOF N-CH 100V 300A
Infineon
MOSFET N-CH 100V 31A/260A 8HSOF
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