IPT020N10N3ATMA1 Datasheet PDF - Infineon

●The IPT020N10N3 is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

● Industry"s lowest R DS(on)

● Highest current capability up to 300A

● Very low package parasitic and inductances

● Less paralleling and cooling required

● Highest system reliability

● Enabling very compact design

● Normal level

● Excellent gate charge x RDS (ON) product (FOM)

● Extremely low ON-resistance RDS (ON)

● High current capability

● Qualified according to JEDEC for target application

● Halogen-free, Green device