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Part Datasheet Search > MOSFETs > Infineon > IPW60R099CP Datasheet PDF
IPW60R099CP
$ 4.476
IPW60R099CP Datasheet PDF (11 Pages)
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IPW60R099CP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
31.0 A
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
99 mΩ
Polarity
N-Channel
Power Dissipation
255 W
Threshold Voltage
3 V
Input Capacitance
2.80 nF
Gate Charge
80.0 nC
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
31.0 A
Rise Time
5 ns
Input Capacitance (Ciss)
2800pF @100V(Vds)
Input Power (Max)
255 W
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
255W (Tc)

IPW60R099CP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPW60R099CP Documents

Infineon
11 Pages / 0.63 MByte
Infineon
10 Pages / 0.3 MByte

IPW60R099 Documents

Infineon
TO-247 N-CH 600V 37.9A
Infineon
TO-247 N-CH 600V 31A
Infineon
TO-247 N-CH 600V 31A
Infineon
TO-247 N-CH 600V 37.9A
Infineon
TO-247 N-CH 600V 22A
Infineon
TO-247 N-CH 600V 37.9A
Infineon
TO-247 N-CH 600V 31A
Infineon
TO-247 N-CH 600V 37.9A
Infineon
Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-3
Infineon
TO-247 N-CH 600V 31A
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