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Part Datasheet Search > MOSFETs > International Rectifier > IRF1010EZPBF Datasheet PDF
IRF1010EZPBF
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IRF1010EZPBF Datasheet PDF (12 Pages)
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IRF1010EZPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
75.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
8.5 mΩ
Polarity
N-Channel
Power Dissipation
140 W
Part Family
IRF1010EZ
Threshold Voltage
4 V
Input Capacitance
2810pF @25V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
75.0 A
Rise Time
90.0 ns
Input Capacitance (Ciss)
2810pF @25V(Vds)
Input Power (Max)
140 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRF1010EZPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
10.67 mm
Size-Height
9.02 mm
Operating Temperature
-55℃ ~ 175℃

IRF1010EZPBF Documents

International Rectifier
12 Pages / 0.4 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
5 Pages / 0.05 MByte

IRF1010 Documents

VISHAY
HEXFET POWER MOSFET
Infineon
TO-220AB N-CH 60V 84A
Infineon
TO-220AB N-CH 55V 85A
Infineon
TO-220AB N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
Infineon
D2PAK N-CH 60V 84A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 55V 85A
Infineon
D2PAK N-CH 60V 84A
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