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IRF1104L
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IRF1104L Datasheet PDF (11 Pages)
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IRF1104L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-262-3
Polarity
N-CH
Power Dissipation
2.4W (Ta), 170W (Tc)
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
100A
Input Capacitance (Ciss)
2900pF @25V(Vds)
Power Dissipation (Max)
2.4W (Ta), 170W (Tc)

IRF1104L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF1104L Documents

Infineon
11 Pages / 0.21 MByte
Infineon
5 Pages / 0.08 MByte

IRF1104 Documents

International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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TO-220AB N-CH 40V 100A
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.009Ω, Id=100A)
Infineon
TO-220AB N-CH 40V 100A
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.009Ω; ID 100A; TO-220AB; PD 170W; VGS +/-20V
International Rectifier
MOSFET N-CH 40V 100A D2PAK
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IRF1104LPBF N-channel MOSFET Transistor, 100A, 40V, 3Pin TO-262
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Trans MOSFET N-CH 40V 100A 3Pin(2+Tab) D2PAK
Infineon
TO-262 N-CH 40V 100A
International Rectifier
Mosfet n-Ch 40V 100A 3Pin To-262
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