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Part Datasheet Search > MOSFETs > Infineon > IRF1104LPBF Datasheet PDF
IRF1104LPBF
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IRF1104LPBF Datasheet PDF (10 Pages)
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IRF1104LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262
Polarity
N-CH
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
100A
Rise Time
114 ns
Input Capacitance (Ciss)
2900pF @25V(Vds)
Fall Time
19 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2400 mW

IRF1104LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
10.54 mm
Size-Width
4.69 mm
Size-Height
10.54 mm

IRF1104LPBF Documents

Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRF1104 Documents

International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 40V 100A
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.009Ω, Id=100A)
Infineon
TO-220AB N-CH 40V 100A
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.009Ω; ID 100A; TO-220AB; PD 170W; VGS +/-20V
International Rectifier
MOSFET N-CH 40V 100A D2PAK
International Rectifier
IRF1104LPBF N-channel MOSFET Transistor, 100A, 40V, 3Pin TO-262
International Rectifier
Trans MOSFET N-CH 40V 100A 3Pin(2+Tab) D2PAK
Infineon
TO-262 N-CH 40V 100A
International Rectifier
Mosfet n-Ch 40V 100A 3Pin To-262
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