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IRF1324LPBF
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IRF1324LPBF Datasheet PDF (10 Pages)
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IRF1324LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-262-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
1.65 mΩ
Polarity
N-CH
Power Dissipation
300 W
Drain to Source Voltage (Vds)
24 V
Breakdown Voltage (Drain to Source)
24 V
Continuous Drain Current (Ids)
340A
Input Capacitance (Ciss)
7590pF @24V(Vds)
Input Power (Max)
300 W
Power Dissipation (Max)
300W (Tc)

IRF1324LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.2 mm
Size-Width
4.5 mm
Size-Height
9.45 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF1324LPBF Documents

Infineon
10 Pages / 0.5 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
5 Pages / 0.08 MByte

IRF1324 Documents

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24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package
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TO-220AB N-CH 24V 353A
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D2PAK N-CH 24V 429A
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D2PAK N-CH 24V 429A
International Rectifier
Trans MOSFET N-CH 24V 429A 7Pin(6+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 24V 429A 7Pin(6+Tab) D2PAK T/R
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Trans MOSFET N-CH 24V 340A 3Pin(2+Tab) D2PAK
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Trans MOSFET N-CH 24V 353A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 24V 340A 3Pin(2+Tab) D2PAK T/R
Infineon
TO-262 N-CH 24V 340A
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