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IRF1404PBF Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220AB N-CH 40V 202A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRF1404PBF Datasheet (9 Pages)

Package Outline Dimension on9 Page

IRF1404PBF User Reference Manual Guide (270 Pages)IRF1404PBF Application Note (37 Pages)

IRF1404PBF Datasheet PDF (9 Pages)

View Datasheet

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IRF1404PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Rating

200 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.004 Ω

Polarity

N-Channel

Power Dissipation

200 W

Threshold Voltage

4 V

Input Capacitance

5669 pF

Drain to Source Voltage (Vds)

40 V

Breakdown Voltage (Drain to Source)

40 V

Continuous Drain Current (Ids)

202A

Rise Time

190 ns

Input Capacitance (Ciss)

5669pF @25V(Vds)

Input Power (Max)

333 W

Fall Time

33 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

333W (Tc)

View Datasheet >

IRF1404PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Size-Length

10.67 mm

Size-Height

8.77 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IRF1404PBF Environmental

IRF1404PBF Function Overview

IRF1404PBF Documents

IRF1404PBF Datasheet

Infineon

9 Pages / 0.2 MByte

IRF1404PBF User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IRF1404PBF Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IRF1404PBF Drawing Diagrams

Infineon

2 Pages / 0.17 MByte

IRF1404PBF Application Note

Infineon

37 Pages / 2.01 MByte

IRF1404PBF Notice File

Infineon

5 Pages / 0.04 MByte

IRF1404PBF Other References

Infineon

1 Pages / 0.14 MByte

IRF1404 Documents

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International Rectifier

Trans MOSFET N-CH 40V 202A 3Pin (3+Tab) TO-220AB

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TO-220AB N-CH 40V 202A

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IRF

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IRF1404PBF Datasheet PDF

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IRF1404PBF Datasheet PDF

International Rectifier

MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0035Ω; ID 202A; TO-220AB; PD 333W; VGS +/-20

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MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de

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