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IRF1405ZSTRRPBF
$ 1.508
IRF1405ZSTRRPBF Datasheet PDF (12 Pages)
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IRF1405ZSTRRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263-3
Power Rating
230 W
Polarity
N-CH
Power Dissipation
230 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
150A
Rise Time
110 ns
Input Capacitance (Ciss)
4780pF @25V(Vds)
Fall Time
82 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
230W (Tc)

IRF1405ZSTRRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF1405ZSTRRPBF Documents

Infineon
12 Pages / 0.38 MByte
Infineon
9 Pages / 0.14 MByte

IRF1405 Documents

International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 55V 169A
New Jersey Semiconductor
Trans MOSFET N-CH 55V 131A 3-Pin(3+Tab) TO-262
IRF
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Infineon
TO-220AB N-CH 55V 169A
Infineon
TO-220AB N-CH 55V 150A
Infineon
D2PAK N-CH 55V 131A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.6Milliohms; ID 169A; TO-220AB; PD 330W; -55de
Infineon
D2PAK N-CH 55V 131A
Infineon
D2PAK N-CH 55V 150A
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