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IRF200B211 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220AB N-CH 200V 12A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRF200B211 Datasheet (11 Pages)

Package Outline Dimension on9 Page

IRF200B211 User Reference Manual Guide (270 Pages)IRF200B211 Application Note (37 Pages)

IRF200B211 Datasheet PDF (11 Pages)

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IRF200B211 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.135 Ω

Polarity

N-Channel

Power Dissipation

80 W

Threshold Voltage

4.9 V

Drain to Source Voltage (Vds)

200 V

Continuous Drain Current (Ids)

12A

Rise Time

9.5 ns

Input Capacitance (Ciss)

790pF @50V(Vds)

Fall Time

6.5 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

80W (Tc)

View Datasheet >

IRF200B211 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IRF200B211 Environmental

IRF200B211 Function Overview

IRF200B211 Documents

IRF200B211 Datasheet

Infineon

11 Pages / 0.53 MByte

IRF200B211 User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IRF200B211 Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IRF200B211 Drawing Diagrams

Infineon

2 Pages / 0.17 MByte

IRF200B211 Application Note

Infineon

37 Pages / 2.01 MByte

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