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IRF2804LPBF
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IRF2804LPBF Datasheet PDF (12 Pages)
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IRF2804LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262
Power Rating
330 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0018 Ω
Polarity
N-Channel
Power Dissipation
330 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
280A
Rise Time
120 ns
Input Capacitance (Ciss)
6450pF @25V(Vds)
Fall Time
130 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
330 W

IRF2804LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Material
Silicon
Size-Height
10.54 mm
Operating Temperature
-55℃ ~ 175℃

IRF2804LPBF Documents

Infineon
12 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRF2804 Documents

Infineon
TO-220AB N-CH 40V 280A
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TO-220AB N-CH 40V 280A
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D2PAK N-CH 40V 280A
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D2PAK N-CH 40V 270A
Infineon
D2PAK N-CH 40V 280A
Infineon
TO-262 N-CH 40V 280A
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 1.8Milliohms; ID 280A; TO-220AB; PD 330W; -55de
Infineon
D2PAK N-CH 40V 280A
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