IRF2805 Datasheet PDF - International Rectifier

●Description

●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

●Features

●Advanced Process Technology

●Ultra Low On-Resistance

●175°C Operating Temperature

●Fast Switching

●Repetitive Avalanche Allowed up to Tjmax

●Typical Applications

●Climate Control, ABS, Electronic Braking, Windshield Wipers