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IRF2805LPBF
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IRF2805LPBF Datasheet PDF (11 Pages)
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IRF2805LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Polarity
N-CH
Power Dissipation
200 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
135A
Rise Time
120 ns
Input Capacitance (Ciss)
5110pF @25V(Vds)
Fall Time
110 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200W (Tc)

IRF2805LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Size-Length
10.2 mm
Size-Width
4.5 mm
Size-Height
9.45 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF2805LPBF Documents

Infineon
11 Pages / 0.32 MByte
Infineon
12 Pages / 0.22 MByte
Infineon
1 Pages / 0.12 MByte

IRF2805 Documents

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D2PAK N-CH 55V 135A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 3.9Milliohms; ID 175A; TO-220AB; PD 330W; -55de
International Rectifier
IRF2805 Series 55V 4.7Ω Through Hole N-Channel Power Mosfet - TO-262-3
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Trans MOSFET N-CH 55V 135A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(3+Tab) TO-262
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(2+Tab) D2PAK
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