IRF3205ZSPBF Datasheet PDF - International Rectifier

●VDSS= 55V

●RDS(on)= 6.5mΩ

●ID= 75A

●Description

●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

●Features

●Advanced Process Technology

●Ultra Low On-Resistance

●175°C Operating Temperature

●Fast Switching

●Repetitive Avalanche Allowed up to Tjmax

●Lead-Free