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IRF3808PBF
$ 0.936
IRF3808PBF Datasheet PDF (9 Pages)
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IRF3808PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
75.0 V
Current Rating
140 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
7 mΩ
Polarity
N-Channel
Power Dissipation
330 W
Part Family
IRF3808
Input Capacitance
5310pF @25V
Drain to Source Voltage (Vds)
75 V
Breakdown Voltage (Drain to Source)
75 V
Continuous Drain Current (Ids)
140 A
Rise Time
140 ns
Input Capacitance (Ciss)
5310pF @25V(Vds)
Input Power (Max)
330 W
Fall Time
120 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
330000 mW

IRF3808PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Height
16.51 mm
Operating Temperature
-55℃ ~ 175℃

IRF3808PBF Documents

International Rectifier
9 Pages / 0.24 MByte
International Rectifier
20 Pages / 2.6 MByte

IRF3808 Documents

Infineon
TO-220AB N-CH 80V 140A
International Rectifier
HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007Ω, ID = 140A
IRF
Power MOSFET(Vdss=75V, Rds(on)=0.007Ω, Id=140A)
Infineon
TO-220AB N-CH 80V 140A
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 140A; TO-220AB; PD 330W; -55de
Infineon
D2PAK N-CH 75V 106A
Infineon
D2PAK N-CH 75V 106A
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 106A; D2Pak; PD 200W; VGS +/-2
Infineon
D2PAK N-CH 75V 106A
International Rectifier
Trans MOSFET N-CH 75V 106A 3Pin(2+Tab) D2PAK T/R
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