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Part Datasheet Search > MOSFETs > Fairchild > IRF510A Datasheet PDF
IRF510A
$ 7.893
IRF510A Datasheet PDF (7 Pages)
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IRF510A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
400 mΩ
Polarity
N-Channel
Power Dissipation
33 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
40.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
5.60 A
Rise Time
14 ns
Fall Time
18 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRF510A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
10.67 mm
Size-Width
4.7 mm
Size-Height
16.3 mm

IRF510A Documents

Fairchild
7 Pages / 0.24 MByte
Fairchild
8 Pages / 0.27 MByte

IRF510 Documents

VISHAY
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54Ω, ID = 5.6A
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
Fairchild
Trans MOSFET N-CH 100V 5.6A 3Pin (3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
VISHAY
TO-252-3 N-CH 100V 5.6A 540mΩ
International Rectifier
Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V
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