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IRF510PBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB

Pictures:

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Documentation:

IRF510PBF Datasheet (7 Pages)

IRF510PBF Datasheet PDF (7 Pages)

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IRF510PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

5.60 A

Case/Package

TO-220-3

Polarity

N-Channel

Power Dissipation

43.0 W

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

5.60 A

Rise Time

16 ns

Fall Time

9.4 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

43000 mW

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IRF510PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Bulk

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IRF510PBF Environmental

IRF510PBF Documents

IRF510PBF Datasheet

International Rectifier

7 Pages / 0.26 MByte

IRF510PBF Product Catalog

International Rectifier

7 Pages / 0.23 MByte

IRF510 Documents

IRF510 Datasheet PDF

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Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB

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Intersil

Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB

IRF510 Datasheet PDF

International Rectifier

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54Ω, ID = 5.6A

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MOSFET N-CH 100V 5.6A TO-220AB

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Fairchild

Trans MOSFET N-CH 100V 5.6A 3Pin (3+Tab) TO-220AB

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Vishay Semiconductor

Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB

IRF510PBF Datasheet PDF

VISHAY

TO-220-3 N-CH 100V 5.6A 540mΩ

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TO-252-3 N-CH 100V 5.6A 540mΩ

IRF510PBF Datasheet PDF

International Rectifier

Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB

IRF510PBF Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V

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