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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF510S Datasheet PDF
IRF510S
$ 4.32
IRF510S Datasheet PDF (9 Pages)
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IRF510S Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263-3
Power Dissipation
3.7W (Ta), 43W (Tc)
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
180pF @25V(Vds)
Power Dissipation (Max)
3.7W (Ta), 43W (Tc)

IRF510S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF510S Documents

Vishay Siliconix
9 Pages / 0.17 MByte

IRF510 Documents

VISHAY
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54Ω, ID = 5.6A
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
Fairchild
Trans MOSFET N-CH 100V 5.6A 3Pin (3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
VISHAY
TO-252-3 N-CH 100V 5.6A 540mΩ
International Rectifier
Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V
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