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IRF520NSPBF
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IRF520NSPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
47 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-CH
Power Dissipation
48 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
9.7A
Rise Time
23 ns
Input Capacitance (Ciss)
330pF @25V(Vds)
Fall Time
23 ns
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
3.8W (Ta), 48W (Tc)

IRF520NSPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Operating Temperature
-55℃ ~ 175℃

IRF520NSPBF Documents

Infineon
10 Pages / 0.18 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte

IRF520 Documents

ST Microelectronics
Trans MOSFET N-CH 100V 10A Automotive 3Pin(3+Tab) TO-220
Vishay Siliconix
MOSFET N-CH 100V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 100V 10A TO-220
Harris
MOSFET N-CH 100V 9.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 9.2A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH Si 100V 9.2A 3Pin(3+Tab) TO-220AB
ON Semiconductor
TRANSISTOR:POWER FET (>1W)
VISHAY
MOSFET N-CH 100V 9.2A TO-220AB
Motorola
8A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Intersil
9.2A, 100V, 0.27Ω, N-Channel Power MOSFET
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